CY25AAJ-8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CY25AAJ-8
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(pulse) A
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de CY25AAJ-8 - IGBT
CY25AAJ-8 Datasheet (PDF)
cy25aaj-8.pdf
MITSUBISHI IGBTMITSUBISHI IGBTCY25AAJ-8CY25AAJ-8Nch IGBT for STROBE FLASHERNch IGBT for STROBE FLASHERCY25AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX.5.00.41.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM ...............
cy25aaj-8f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CRG15T120BNR3S , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2