IXGH48N60C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH48N60C3D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 26 nS
Coesⓘ - Capacitancia de salida, typ: 202 pF
Qgⓘ - Carga total de la puerta, typ: 77 nC
Paquete / Cubierta: TO247
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IXGH48N60C3D1 Datasheet (PDF)
ixgh48n60c3d1.pdf
VCES = 600VIXGH48N60C3D1GenX3TM 600V IGBTIC110 = 48Awith DiodeVCE(sat) 2.5Vtfi(typ) = 38nsHigh speed PT IGBT for40-100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VCEVGEM Transient 30 V ( TAB )IC25 TC = 25C (Limited by Leads)
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf
IXGA48N60C3 VCES = 600VGenX3TM 600V IGBTIXGH48N60C3IC110 = 48AIXGP48N60C3VCE(sat) 2.5VHigh Speed PT IGBTs fortfi(typ) = 38ns40-100kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VI
ixgh48n60c3.pdf
GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3IC110 = 48A IXGP48N60C3 2.5VHigh-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3tfi(typ) = 38nsSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V FeaturesVGES Continuous 20 V Optimized for Low Switching LossesVGEM Tra
ixgh48n60c3c1.pdf
Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60C3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 2.5Vtfi(typ) = 38nsHigh Speed PT IGBT for40 - 100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V E ( TAB )VGEM
Otros transistores... IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IXGH48N60B3D1 , IXGH48N60C3 , IXGH48N60C3C1 , IHW40T60 , IXGH4N250C , IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2