IXGH48N60C3D1 - параметры транзистора, его аналоги, Даташиты

IXGH48N60C3D1 Datasheet (PDF)

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VCES = 600VIXGH48N60C3D1GenX3TM 600V IGBTIC110 = 48Awith DiodeVCE(sat) 2.5Vtfi(typ) = 38nsHigh speed PT IGBT for40-100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VCEVGEM Transient 30 V ( TAB )IC25 TC = 25C (Limited by Leads)

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IXGA48N60C3 VCES = 600VGenX3TM 600V IGBTIXGH48N60C3IC110 = 48AIXGP48N60C3VCE(sat) 2.5VHigh Speed PT IGBTs fortfi(typ) = 38ns40-100kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VI

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GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3IC110 = 48A IXGP48N60C3 2.5VHigh-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3tfi(typ) = 38nsSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V FeaturesVGES Continuous 20 V Optimized for Low Switching LossesVGEM Tra

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Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60C3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 2.5Vtfi(typ) = 38nsHigh Speed PT IGBT for40 - 100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V E ( TAB )VGEM

Другие IGBT... IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IXGH48N60B3D1 , IXGH48N60C3 , IXGH48N60C3C1 , YGW40N65F1 , IXGH4N250C , IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 .