IXGH50N60B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH50N60B2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 240 pF
Qgⓘ - Carga total de la puerta, typ: 140 nC
Paquete / Cubierta: TO247
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IXGH50N60B2 Datasheet (PDF)
ixgh50n60b2 ixgt50n60b2.pdf
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
ixgh50n60b2.pdf
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
ixgh50n60b4.pdf
VCES = 600VHigh-Gain IGBTs IXGA50N60B4IC110 = 50AIXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4Low-Vsat PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C 1
ixgh50n60b.pdf
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
ixgh50n60b4d1.pdf
VCES = 600VHigh-Gain IGBTs IXGH50N60B4D1IC110 = 50Aw/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTsTO-247 (IXGH)GC TabESymbol Test Conditions Maximum RatingsTO-3P (IXGQ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 100 ATabIC
Otros transistores... IXGH48N60B3 , IXGH48N60B3C1 , IXGH48N60B3D1 , IXGH48N60C3 , IXGH48N60C3C1 , IXGH48N60C3D1 , IXGH4N250C , IXGH50N120C3 , NGD8201N , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , IXGH50N90B2 , IXGH50N90B2D1 , IXGH56N60A3 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2