IXGH50N60B2 Specs and Replacement

Type Designator: IXGH50N60B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO247

 IXGH50N60B2 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGH50N60B2 datasheet

 ..1. Size:585K  ixys
 ixgh50n60b2 ixgt50n60b2.pdf pdf_icon

IXGH50N60B2

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11... See More ⇒

 ..2. Size:583K  ixys
 ixgh50n60b2.pdf pdf_icon

IXGH50N60B2

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11... See More ⇒

 4.1. Size:218K  ixys
 ixgh50n60b4.pdf pdf_icon

IXGH50N60B2

VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1... See More ⇒

 4.2. Size:181K  ixys
 ixgh50n60b.pdf pdf_icon

IXGH50N60B2

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le... See More ⇒

SHOW MORE

Specs: IXGH48N60B3, IXGH48N60B3C1, IXGH48N60B3D1, IXGH48N60C3, IXGH48N60C3C1, IXGH48N60C3D1, IXGH4N250C, IXGH50N120C3, SGH80N60UFD, IXGH50N60B4, IXGH50N60B4D1, IXGH50N60C2, IXGH50N60C4, IXGH50N60C4D1, IXGH50N90B2, IXGH50N90B2D1, IXGH56N60A3

Keywords - IXGH50N60B2 transistor spec

 IXGH50N60B2 cross reference
 IXGH50N60B2 equivalent finder
 IXGH50N60B2 lookup
 IXGH50N60B2 substitution
 IXGH50N60B2 replacement