IXGH50N90B2D1 Todos los transistores

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IXGH50N90B2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH50N90B2D1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 900V

Voltaje de saturación colector-emisor (Vce sat): 2.7V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 200

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH50N90B2D1 Datasheet (PDF)

1.1. ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf Size:203K _ixys

IXGH50N90B2D1
IXGH50N90B2D1

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V

1.2. ixgh50n90b2 ixgt50n90b2.pdf Size:162K _ixys

IXGH50N90B2D1
IXGH50N90B2D1

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25C (limited by leads)

1.3. ixgh50n90b2d1.pdf Size:198K _igbt

IXGH50N90B2D1
IXGH50N90B2D1

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ± 20 V G C VGEM Transien

1.4. ixgh50n90b2.pdf Size:158K _igbt

IXGH50N90B2D1
IXGH50N90B2D1

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limit

Otros transistores... IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , IXGH50N90B2 , SGP10N60A , IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 .

 


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Introduzca al menos 1 números o letras