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IXGH64N60A3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH64N60A3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.35

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic):

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 222

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH64N60A3 Datasheet (PDF)

1.1. ixgh64n60b3.pdf Size:163K _igbt

IXGH64N60A3
IXGH64N60A3

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30

1.2. ixgh64n60a3.pdf Size:192K _igbt

IXGH64N60A3
IXGH64N60A3

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C (TAB) C IC11

 1.3. ixgh64n60b3.pdf Size:163K _ixys

IXGH64N60A3
IXGH64N60A3

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30

1.4. ixgh64n60a3.pdf Size:192K _ixys

IXGH64N60A3
IXGH64N60A3

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C (TAB) C IC11

Otros transistores... IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 , IRG4PC60F , IXGH64N60B3 , IXGH6N170 , IXGH6N170A , IXGH72N60A3 , IXGH72N60B3 , IXGH72N60C3 , IXGH85N30C3 , IXGH90N60B3 .

 

 
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