IXGH64N60A3 Todos los transistores

 

IXGH64N60A3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH64N60A3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.35V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 222

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH64N60A3 Datasheet (PDF)

1.1. ixgh64n60a3.pdf Size:192K _igbt

IXGH64N60A3
IXGH64N60A3

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C (TAB) C IC11

1.2. ixgh64n60b3.pdf Size:163K _igbt

IXGH64N60A3
IXGH64N60A3

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30

 5.1. ixgh60n60c2 ixgt60n60c2.pdf Size:583K _ixys

IXGH64N60A3
IXGH64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25C (limited by leads) 75 A

5.2. ixgh60n60b2 ixgt60n60b2.pdf Size:578K _ixys

IXGH64N60A3
IXGH64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) < 1.8 V Optimized for 10-25 kHz hard tfi typ = 100 ns switching and up to 100 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

 5.3. ixgh60n60 ixgk60n60 ixgt60n60.pdf Size:95K _ixys

IXGH64N60A3
IXGH64N60A3

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25C, limited by leads 75 A (IXGT) IC90 TC = 90C60 A G E ICM TC = 25C, 1 ms 200 A

5.4. ixgh60n60c3.pdf Size:163K _igbt

IXGH64N60A3
IXGH64N60A3

GenX3TM 600V VCES = 600V IXGH60N60C3 IGBT IC110 = 60A ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi (typ) = 50ns High Speed PT IGBT for 40-100kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A G

 5.5. ixgh6n170a.pdf Size:189K _igbt

IXGH64N60A3
IXGH64N60A3

Preliminary Technical Information High Voltage VCES = 1700V IXGH6N170A IGBTs IC25 = 6A IXGT6N170A ≤ ≤ VCE(sat) ≤ 7.0V ≤ ≤ tfi(typ) = 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C C (TAB) E VGES Continuous ± 20 V VGEM Transient ± 30 V TO-268 (IXGT) IC25 TC = 25°C 6 A

5.6. ixgh60n60c2.pdf Size:581K _igbt

IXGH64N60A3
IXGH64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by

5.7. ixgh60n60b2.pdf Size:576K _igbt

IXGH64N60A3
IXGH64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) < 1.8 V Optimized for 10-25 kHz hard tfi typ = 100 ns switching and up to 100 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Trans

5.8. ixgh60n30c3.pdf Size:38K _igbt

IXGH64N60A3
IXGH64N60A3

Advance Technical Information VCES = 300V IXGH60N30C3 GenX3TM 300V IGBT IC110 = 60A ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ High Speed IGBTs for tfi typ = 70ns 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V G VGES Continuous ±20 V C (TAB) E VGEM Transient ±30 V IC2

5.9. ixgh60n60.pdf Size:94K _igbt

IXGH64N60A3
IXGH64N60A3

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 IC25 TC = 25°C, limited by leads 75 A (IXGT) IC90 TC = 90°C60 A G E ICM TC = 25°C,

5.10. ixgh6n170.pdf Size:78K _igbt

IXGH64N60A3
IXGH64N60A3

IXGH 6N170 High Voltage VCES = 1700 V IXGT 6N170 IC25 = 12 A IGBT VCE(sat) = 4.0 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ± 20 V E C (TAB) VGEM Transient ± 30 V IC25 TC = 25°C12 A TO-247 AD (IXGH) IC90 TC = 90°C6 A ICM TC = 25°C, 1 ms 24 A SSOA

5.11. ixgh60n60c3d1.pdf Size:236K _igbt

IXGH64N60A3
IXGH64N60A3

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C C (Tab) E VGES Continuous ±20 V VGEM Transient ±30 V IC25

Otros transistores... IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 , IRG4PC60F , IXGH64N60B3 , IXGH6N170 , IXGH6N170A , IXGH72N60A3 , IXGH72N60B3 , IXGH72N60C3 , IXGH85N30C3 , IXGH90N60B3 .

 

 
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