IXGH64N60A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH64N60A3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 460
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 64(110°C)
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.2
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 40
nS
Coesⓘ - Capacitancia de salida, typ: 270
pF
Paquete / Cubierta:
TO247
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IXGH64N60A3 PDF specs
..1. Size:192K ixys
ixgh64n60a3.pdf 

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to VCE(sat) 1.35V 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C IC11... See More ⇒
5.1. Size:163K ixys
ixgh64n60b3.pdf 

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT VCE(sat) 1.8V IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 ... See More ⇒
9.1. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf 

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒
9.2. Size:163K ixys
ixgh60n60c3.pdf 

GenX3TM 600V VCES = 600V IXGH60N60C3 IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBT for 40-100kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C (Limited by Leads) 75 A G ... See More ⇒
9.3. Size:284K ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf 

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1* *Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGE... See More ⇒
9.4. Size:236K ixys
ixgh60n60c3d1.pdf 

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGEM Transient 30 V IC25 ... See More ⇒
9.5. Size:181K ixys
ixgt6n170 ixgh6n170.pdf 

VCES = 1700V High Voltage IXGT6N170 IC90 = 6A IGBT IXGH6N170 VCE(sat) 4.0V tfi(typ) = 290ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 12 A IC90 TC =... See More ⇒
9.6. Size:94K ixys
ixgh60n60.pdf 

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C, ... See More ⇒
9.7. Size:581K ixys
ixgh60n60c2.pdf 

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒
9.8. Size:197K ixys
ixgt6n170a ixgh6n170a.pdf 

VCES = 1700V High Voltage IXGT6N170A IC25 = 6A IGBT IXGH6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 6 A IC110 TC ... See More ⇒
9.9. Size:95K ixys
ixgh60n60 ixgk60n60 ixgt60n60.pdf 

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C, ... See More ⇒
9.10. Size:576K ixys
ixgh60n60b2.pdf 

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) ... See More ⇒
9.11. Size:38K ixys
ixgh60n30c3.pdf 

Advance Technical Information VCES = 300V IXGH60N30C3 GenX3TM 300V IGBT IC110 = 60A VCE(sat) 1.8V High Speed IGBTs for tfi typ = 70ns 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC2... See More ⇒
9.13. Size:189K ixys
ixgh6n170a.pdf 

Preliminary Technical Information High Voltage VCES = 1700V IXGH6N170A IGBTs IC25 = 6A IXGT6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 6 A... See More ⇒
9.14. Size:78K ixys
ixgh6n170.pdf 

IXGH 6N170 High Voltage VCES = 1700 V IXGT 6N170 IC25 = 12 A IGBT VCE(sat) = 4.0 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C12 A TO-247 AD (IXGH) IC90 TC = 90 C6 A ICM TC = 25 C, 1 ms 24 A SSOA... See More ⇒
Otros transistores... IXGH56N60A3
, IXGH56N60B3
, IXGH56N60B3D1
, IXGH60N30C3
, IXGH60N60B2
, IXGH60N60C2
, IXGH60N60C3
, IXGH60N60C3D1
, TGAN60N60F2DS
, IXGH64N60B3
, IXGH6N170
, IXGH6N170A
, IXGH72N60A3
, IXGH72N60B3
, IXGH72N60C3
, IXGH85N30C3
, IXGH90N60B3
.