IXGH64N60B3 Todos los transistores

 

IXGH64N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH64N60B3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 460 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 64(110°C) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.59 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 41 nS
   Coesⓘ - Capacitancia de salida, typ: 260 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH64N60B3 Datasheet (PDF)

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IXGH64N60B3

Preliminary Technical InformationIXGH64N60B3 VCES = 600VGenX3TM 600V IGBTIXGT64N60B3IC110 = 64AMedium speed low Vsat PTVCE(sat) 1.8VIGBTs for 5 - 40kHz switchingtfi(typ) = 88nsSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30

 5.1. Size:192K  ixys
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IXGH64N60B3

Preliminary Technical InformationIXGH64N60A3 VCES = 600VGenX3TM 600V IGBTIXGT64N60A3IC110 = 64AUltra-lowVsat PT IGBTs for up toVCE(sat) 1.35V5 kHz switchingSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC (TAB)CIC11

 9.1. Size:583K  ixys
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IXGH64N60B3

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

 9.2. Size:163K  ixys
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IXGH64N60B3

GenX3TM 600V VCES = 600VIXGH60N60C3IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBT for40-100kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Limited by Leads) 75 AG

Otros transistores... IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 , IXGH64N60A3 , IHW40T60 , IXGH6N170 , IXGH6N170A , IXGH72N60A3 , IXGH72N60B3 , IXGH72N60C3 , IXGH85N30C3 , IXGH90N60B3 , IXGI48N60C3 .

History: MMG100SR060UZA | IXYH40N65C3H1 | IKW40N65F5 | MMG600WB120B6TC | JNG40T65HYU1 | CM300DU-12F | NTE3302

 

 
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