IXGH64N60B3 Specs and Replacement

Type Designator: IXGH64N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 460 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 64(110°C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.59 V @25℃

tr ⓘ - Rise Time, typ: 41 nS

Coesⓘ - Output Capacitance, typ: 260 pF

Package: TO247

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IXGH64N60B3 datasheet

 ..1. Size:163K  ixys
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IXGH64N60B3

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT VCE(sat) 1.8V IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 ... See More ⇒

 5.1. Size:192K  ixys
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IXGH64N60B3

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to VCE(sat) 1.35V 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C IC11... See More ⇒

 9.1. Size:583K  ixys
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IXGH64N60B3

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒

 9.2. Size:163K  ixys
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IXGH64N60B3

GenX3TM 600V VCES = 600V IXGH60N60C3 IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBT for 40-100kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C (Limited by Leads) 75 A G ... See More ⇒

Specs: IXGH56N60B3, IXGH56N60B3D1, IXGH60N30C3, IXGH60N60B2, IXGH60N60C2, IXGH60N60C3, IXGH60N60C3D1, IXGH64N60A3, TGAN20N135FD, IXGH6N170, IXGH6N170A, IXGH72N60A3, IXGH72N60B3, IXGH72N60C3, IXGH85N30C3, IXGH90N60B3, IXGI48N60C3

Keywords - IXGH64N60B3 transistor spec

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