IXGK100N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGK100N170
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 830 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 170 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 192 nS
Coesⓘ - Capacitancia de salida, typ: 455 pF
Qgⓘ - Carga total de la puerta, typ: 425 nC
Paquete / Cubierta: TO264
- Selección de transistores por parámetros
IXGK100N170 Datasheet (PDF)
ixgk100n170 ixgx100n170.pdf

Preliminary Technical InformationHigh Voltage IGBT VCES = 1700VIXGK100N170IC90 = 100AIXGX100N170VCE(sat) 3.0VTO-264Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC(TAB)EEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 170 APLUS247TMIC90 T
ixgk100n170.pdf

VCES = 1700VHigh Voltage IXGK100N170IC90 = 100AIGBTs IXGX100N170 VCE(sat) 3.0V TO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 V GCVCGR TJ = 25C to 150C, RGE = 1M 1700 VETabVGES Continuous 20 VVGEM Transient 30 VPLUS247 (IXGX)IC25 TC= 25C ( Chip Capability ) 170 AILRMS Terminal Current Limit
ixgk120n60c2.pdf

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25
ixgk120n120b3.pdf

Advance Technical InformationVCES = 1200VIXGK120N120B3GenX3TM 1200V IGBTsIC90 = 120AIXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTsfor 3-20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VC(TAB)EEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VPLUS 247TM (IXG
Otros transistores... IXGH72N60B3 , IXGH72N60C3 , IXGH85N30C3 , IXGH90N60B3 , IXGI48N60C3 , IXGJ40N60C2D1 , IXGJ50N60B , IXGJ50N60C4D1 , IKW40T120 , IXGK120N120A3 , IXGK120N120B3 , IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , IXGK28N140B3H1 , IXGK320N60A3 , IXGK320N60B3 .
History: IXSA16N60 | IXGK50N60B2D1 | STGB18N40LZT4
History: IXSA16N60 | IXGK50N60B2D1 | STGB18N40LZT4



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