IXGK100N170 Specs and Replacement

Type Designator: IXGK100N170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 170 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 192 nS

Coesⓘ - Output Capacitance, typ: 455 pF

Package: TO264

 IXGK100N170 Substitution

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IXGK100N170 datasheet

 ..1. Size:201K  ixys
ixgk100n170 ixgx100n170.pdf pdf_icon

IXGK100N170

Preliminary Technical Information High Voltage IGBT VCES = 1700V IXGK100N170 IC90 = 100A IXGX100N170 VCE(sat) 3.0V TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) E E VGEM Transient 30 V IC25 TC = 25 C (Chip Capability) 170 A PLUS247TM IC90 T... See More ⇒

 ..2. Size:185K  ixys
ixgk100n170.pdf pdf_icon

IXGK100N170

VCES = 1700V High Voltage IXGK100N170 IC90 = 100A IGBTs IXGX100N170 VCE(sat) 3.0V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V E Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247 (IXGX) IC25 TC= 25 C ( Chip Capability ) 170 A ILRMS Terminal Current Limit ... See More ⇒

 9.1. Size:186K  ixys
ixgk120n60c2.pdf pdf_icon

IXGK100N170

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGK120N60C2 Lightspeed 2TM Series IC110 = 120A IXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC25 TC = 25 ... See More ⇒

 9.2. Size:121K  ixys
ixgk120n120b3.pdf pdf_icon

IXGK100N170

Advance Technical Information VCES = 1200V IXGK120N120B3 GenX3TM 1200V IGBTs IC90 = 120A IXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTs for 3-20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247TM (IXG... See More ⇒

Specs: IXGH72N60B3, IXGH72N60C3, IXGH85N30C3, IXGH90N60B3, IXGI48N60C3, IXGJ40N60C2D1, IXGJ50N60B, IXGJ50N60C4D1, MBQ40T65FDSC, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, IXGK120N60C2, IXGK28N140B3H1, IXGK320N60A3, IXGK320N60B3

Keywords - IXGK100N170 transistor spec

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