IXGK120N120A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK120N120A3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 830 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 240 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 67 nS

Coesⓘ - Capacitancia de salida, typ: 655 pF

Encapsulados: TO264

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IXGK120N120A3 datasheet

 ..1. Size:215K  ixys
ixgk120n120a3.pdf pdf_icon

IXGK120N120A3

Preliminary Technical Information GenX3TM A3-Class VCES = 1200V IXGK120N120A3 IC110 = 120A IGBTs IXGX120N120A3 VCE(sat) 2.20V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247T

 3.1. Size:121K  ixys
ixgk120n120b3.pdf pdf_icon

IXGK120N120A3

Advance Technical Information VCES = 1200V IXGK120N120B3 GenX3TM 1200V IGBTs IC90 = 120A IXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTs for 3-20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247TM (IXG

 3.2. Size:123K  ixys
ixgx120n120b3 ixgk120n120b3.pdf pdf_icon

IXGK120N120A3

Advance Technical Information VCES = 1200V IXGK120N120B3 GenX3TM 1200V IGBTs IC90 = 120A IXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTs for 3-20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247TM (IXG

 6.1. Size:186K  ixys
ixgk120n60c2.pdf pdf_icon

IXGK120N120A3

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGK120N60C2 Lightspeed 2TM Series IC110 = 120A IXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC25 TC = 25

Otros transistores... IXGH72N60C3, IXGH85N30C3, IXGH90N60B3, IXGI48N60C3, IXGJ40N60C2D1, IXGJ50N60B, IXGJ50N60C4D1, IXGK100N170, SGT40N60FD2PT, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, IXGK120N60C2, IXGK28N140B3H1, IXGK320N60A3, IXGK320N60B3, IXGK35N120B