IXGK120N120B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGK120N120B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 830 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 88 nS
Coesⓘ - Capacitancia de salida, typ: 670 pF
Qgⓘ - Carga total de la puerta, typ: 470 nC
Paquete / Cubierta: TO264
- Selección de transistores por parámetros
IXGK120N120B3 Datasheet (PDF)
ixgk120n120b3.pdf

Advance Technical InformationVCES = 1200VIXGK120N120B3GenX3TM 1200V IGBTsIC90 = 120AIXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTsfor 3-20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VC(TAB)EEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VPLUS 247TM (IXG
ixgx120n120b3 ixgk120n120b3.pdf

Advance Technical InformationVCES = 1200VIXGK120N120B3GenX3TM 1200V IGBTsIC90 = 120AIXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTsfor 3-20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VC(TAB)EEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VPLUS 247TM (IXG
ixgk120n120a3.pdf

Preliminary Technical InformationGenX3TM A3-Class VCES = 1200VIXGK120N120A3IC110 = 120AIGBTsIXGX120N120A3 VCE(sat) 2.20V Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VC(TAB)EEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VPLUS 247T
ixgk120n60c2.pdf

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25
Otros transistores... IXGH85N30C3 , IXGH90N60B3 , IXGI48N60C3 , IXGJ40N60C2D1 , IXGJ50N60B , IXGJ50N60C4D1 , IXGK100N170 , IXGK120N120A3 , IXRH40N120 , IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , IXGK28N140B3H1 , IXGK320N60A3 , IXGK320N60B3 , IXGK35N120B , IXGK35N120BD1 .
History: HIL40N120VF | MMG100DR120B | IXST24N60B | IXSP24N60B | IXGP15N120C | NSGM100GB120 | NGTB15N120LWG
History: HIL40N120VF | MMG100DR120B | IXST24N60B | IXSP24N60B | IXGP15N120C | NSGM100GB120 | NGTB15N120LWG



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