VBGT15N120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBGT15N120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 136 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 50 pF
Encapsulados: TO3PN
Búsqueda de reemplazo de VBGT15N120 IGBT
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VBGT15N120 datasheet
vbgt15n120.pdf
VBGT15N120 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanc
vbgt15n120p.pdf
VBGT15N120P www.VBsemi.com General Description VBsemi IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 )
vbgt15n135.pdf
VBGT15N135 www.VBsemi.com General Description VBsemi IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. _ + _ + _ + _ + FEATURES _ + High speed switching _ + _ + High system efficiency _ + _ + Soft current turn-off waveforms _ + _ Extreme
Otros transistores... CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , YGW40N65F1 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 .
History: VS-GB50LP120N | SKM145GAR123D | SKM145GAX123D | SGF80N60UF | AP50G60SW | VS-GB75LA60UF | VS-GB400AH120U
History: VS-GB50LP120N | SKM145GAR123D | SKM145GAX123D | SGF80N60UF | AP50G60SW | VS-GB75LA60UF | VS-GB400AH120U
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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