All IGBT. G10N50 Datasheet

 

G10N50 IGBT. Datasheet pdf. Equivalent

Type Designator: G10N50

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 12A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO251AA

G10N50 Transistor Equivalent Substitute - IGBT Cross-Reference Search

G10N50 Datasheet (PDF)

No PDF!

Datasheet: CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , IXGP7N60B , G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D .

 


G10N50
  G10N50
  G10N50
  G10N50
 
G10N50
  G10N50
  G10N50
  G10N50
 

social 

LIST

Last Update

IGBT: BSM50GP60 | BSM50GP120 | BSM50GD60DLC_E3226 | BSM50GD60DLC | BSM50GD170DL | BSM50GD120DN2G | BSM50GD120DN2E3226 | BSM50GD120DN2 | BSM50GD120DLC | BSM50GB60DLC |

Enter a full or partial SMD code with a minimum of 2 letters or numbers