IXGK320N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGK320N60B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 1700
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 500
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.4
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 66
Capacitancia de salida (Cc), typ, pF: 960
Carga total de la puerta (Qg), typ, nC: 585
Paquete / Cubierta: TO264
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IXGK320N60B3 Datasheet (PDF)
ixgk320n60b3.pdf
Preliminary Technical InformationGenX3TM 600V VCES = 600VIXGK320N60B3IC90 = 320AIGBTsIXGX320N60B3VCE(sat) 1.6VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM T
ixgk320n60a3.pdf
GenX3TM 600V IGBTs VCES = 600VIXGK320N60A3IC25 = 320AIXGX320N60A3VCE(sat) 1.25VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCTabEEVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)IC25 TC = 25C (C
ixgk35n120b.pdf
Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120c.pdf
Preliminary Data SheetIXGK 35N120C VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120C IC25 = 70 AIXGK 35N120CD1 VCE(sat) = 4.0 VIXGX 35N120CD1 tfi(typ) = 115 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120b ixgk35n120bd1 ixgx35n120b ixgx35n120bd1.pdf
Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120bd1.pdf
Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120cd1.pdf
Preliminary Data SheetIXGK 35N120C VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120C IC25 = 70 AIXGK 35N120CD1 VCE(sat) = 4.0 VIXGX 35N120CD1 tfi(typ) = 115 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
Otros transistores... IXGK100N170 , IXGK120N120A3 , IXGK120N120B3 , IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , IXGK28N140B3H1 , IXGK320N60A3 , CRG60T60AK3HD , IXGK35N120B , IXGK35N120BD1 , IXGK35N120C , IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 , IXGK50N60A2D1 , IXGK50N60B2D1 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ