IXGK320N60B3 Specs and Replacement

Type Designator: IXGK320N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1700 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 500 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 66 nS

Coesⓘ - Output Capacitance, typ: 960 pF

Package: TO264

 IXGK320N60B3 Substitution

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IXGK320N60B3 datasheet

 ..1. Size:193K  ixys
 ixgk320n60b3.pdf pdf_icon

IXGK320N60B3

Preliminary Technical Information GenX3TM 600V VCES = 600V IXGK320N60B3 IC90 = 320A IGBTs IXGX320N60B3 VCE(sat) 1.6V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM T... See More ⇒

 4.1. Size:199K  ixys
 ixgk320n60a3.pdf pdf_icon

IXGK320N60B3

GenX3TM 600V IGBTs VCES = 600V IXGK320N60A3 IC25 = 320A IXGX320N60A3 VCE(sat) 1.25V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C Tab E E VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX) IC25 TC = 25 C (C... See More ⇒

 9.1. Size:45K  ixys
 ixgk35n120b.pdf pdf_icon

IXGK320N60B3

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

 9.2. Size:45K  ixys
 ixgk35n120c.pdf pdf_icon

IXGK320N60B3

Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

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Specs: IXGK100N170, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, IXGK120N60C2, IXGK28N140B3H1, IXGK320N60A3, GT30F125, IXGK35N120B, IXGK35N120BD1, IXGK35N120C, IXGK35N120CD1, IXGK400N30A3, IXGK50N120C3H1, IXGK50N60A2D1, IXGK50N60B2D1

Keywords - IXGK320N60B3 transistor spec

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