IXGK50N60C2D1 Todos los transistores

 

IXGK50N60C2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGK50N60C2D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 480 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 290 pF
   Paquete / Cubierta: TO264
     - Selección de transistores por parámetros

 

IXGK50N60C2D1 Datasheet (PDF)

 ..1. Size:628K  ixys
ixgk50n60c2d1 ixgx50n60c2d1.pdf pdf_icon

IXGK50N60C2D1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

 ..2. Size:493K  ixys
ixgk50n60c2d1.pdf pdf_icon

IXGK50N60C2D1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

 5.1. Size:494K  ixys
ixgk50n60b2d1.pdf pdf_icon

IXGK50N60C2D1

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 5.2. Size:627K  ixys
ixgk50n60b2d1 ixgx50n60b2d1.pdf pdf_icon

IXGK50N60C2D1

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

Otros transistores... IXGK35N120B , IXGK35N120BD1 , IXGK35N120C , IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 , IXGK50N60A2D1 , IXGK50N60B2D1 , IHW20N120R2 , IXGK50N90B2D1 , IXGK55N120A3H1 , IXGK60N60B2D1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 .

History: APT60GA60JD60 | IKD10N60RF | IXGT64N60A3 | IRG7PH42UDPBF | AOK75B60D1 | BLG15T65FUL-B | SGS13N60UFD

 

 
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