IXGK60N60B2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGK60N60B2D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 500
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 75
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8(max)
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 30
Capacitancia de salida (Cc), typ, pF: 340
Carga total de la puerta (Qg), typ, nC: 170
Paquete / Cubierta: TO264
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IXGK60N60B2D1 Datasheet (PDF)
ixgk60n60b2d1 ixgx60n60b2d1.pdf
Advance Technical DataIXGK60N60B2D1 VCES = 600 VHiPerFASTTMIXGX 60N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat)
ixgk60n60b2d1.pdf
Advance Technical DataIXGK60N60B2D1 VCES = 600 VHiPerFASTTMIXGX 60N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat)
ixgk60n60c2d1.pdf
IXGK 60N60C2D1VCES = 600 VHiPerFASTTMIXGX 60N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 35 nsSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads)
ixgh60n60 ixgk60n60 ixgt60n60.pdf
VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,
ixgk60n60.pdf
VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,
Otros transistores... IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 , IXGK50N60A2D1 , IXGK50N60B2D1 , IXGK50N60C2D1 , IXGK50N90B2D1 , IXGK55N120A3H1 , IRGB20B60PD1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ