IXGK75N250 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK75N250

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 780 W

|Vce|ⓘ - Tensión máxima colector-emisor: 2500 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 170 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃

trⓘ - Tiempo de subida, typ: 225 nS

Coesⓘ - Capacitancia de salida, typ: 345 pF

Encapsulados: TO264

 Búsqueda de reemplazo de IXGK75N250 IGBT

- Selecciónⓘ de transistores por parámetros

 

IXGK75N250 datasheet

 ..1. Size:172K  ixys
 ixgk75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical Information High Voltage IGBTs VCES = 2500V IXGK75N250 IC110 = 75A IXGX75N250 For Capacitor Discharge VCE(sat) 2.7V Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX)

 0.1. Size:174K  ixys
 ixgk75n250-ixgx75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical Information High Voltage IGBTs VCES = 2500V IXGK75N250 IC110 = 75A IXGX75N250 For Capacitor Discharge VCE(sat) 2.7V Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX)

 9.1. Size:229K  ixys
 ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

IXGK75N250

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 VCE(sat) 1.35V tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V (TAB) G VGES Continuous 20 V C E

 9.2. Size:221K  ixys
 ixgk72n60b3h1.pdf pdf_icon

IXGK75N250

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGK72N60B3H1 IC110 = 72A with Diode IXGX72N60B3H1 VCE(sat) 1.8V tfi(typ) = 92ns Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V (

MOSTRAR MÁS

Otros transistores... IXGK50N60C2D1, IXGK50N90B2D1, IXGK55N120A3H1, IXGK60N60B2D1, IXGK60N60C2D1, IXGK64N60B3D1, IXGK72N60A3H1, IXGK72N60B3H1, GT30F124, IXGK82N120A3, IXGK82N120B3, IXGL200N60B3, IXGL75N250, IXGN100N170, IXGN120N60A3, IXGN120N60A3D1, IXGN200N60A2