IXGK75N250 Todos los transistores

 

IXGK75N250 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGK75N250
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 780 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 2500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 170 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 225 nS
   Coesⓘ - Capacitancia de salida, typ: 345 pF
   Paquete / Cubierta: TO264
     - Selección de transistores por parámetros

 

IXGK75N250 Datasheet (PDF)

 ..1. Size:172K  ixys
 ixgk75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)

 0.1. Size:174K  ixys
 ixgk75n250-ixgx75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)

 9.1. Size:229K  ixys
 ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

IXGK75N250

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

 9.2. Size:221K  ixys
 ixgk72n60b3h1.pdf pdf_icon

IXGK75N250

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGK72N60B3H1IC110 = 72Awith DiodeIXGX72N60B3H1VCE(sat) 1.8Vtfi(typ) = 92nsMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V (

MOSTRAR MÁS

Otros transistores... IXGK50N60C2D1 , IXGK50N90B2D1 , IXGK55N120A3H1 , IXGK60N60B2D1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , GT30F124 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 .

History: HGTG10N120BND | MUBW15-06A7 | FGAF30S65AQ

 

 
Back to Top

 


 
.