All IGBT. IXGK75N250 Datasheet

 

IXGK75N250 Datasheet and Replacement


   Type Designator: IXGK75N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 780 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 170 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 225 nS
   Coesⓘ - Output Capacitance, typ: 345 pF
   Package: TO264
      - IGBT Cross-Reference

 

IXGK75N250 Datasheet (PDF)

 ..1. Size:172K  ixys
 ixgk75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)

 0.1. Size:174K  ixys
 ixgk75n250-ixgx75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)

 9.1. Size:229K  ixys
 ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

IXGK75N250

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

 9.2. Size:221K  ixys
 ixgk72n60b3h1.pdf pdf_icon

IXGK75N250

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGK72N60B3H1IC110 = 72Awith DiodeIXGX72N60B3H1VCE(sat) 1.8Vtfi(typ) = 92nsMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V (

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Datasheet: IXGK50N60C2D1 , IXGK50N90B2D1 , IXGK55N120A3H1 , IXGK60N60B2D1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , GT30F124 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 .

History: 1MBI300U2H-060L-50 | 1MBI200U4H-120L-50 | FGD3245G2-F085C | IXGA15N120B | FGB3040G2-F085 | IXGP16N60C2D1 | AIHD10N60R

Keywords - IXGK75N250 transistor datasheet

 IXGK75N250 cross reference
 IXGK75N250 equivalent finder
 IXGK75N250 lookup
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 IXGK75N250 replacement

 

 
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