IXGK75N250 Specs and Replacement

Type Designator: IXGK75N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 780 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 170 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃

tr ⓘ - Rise Time, typ: 225 nS

Coesⓘ - Output Capacitance, typ: 345 pF

Package: TO264

 IXGK75N250 Substitution

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IXGK75N250 datasheet

 ..1. Size:172K  ixys
 ixgk75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical Information High Voltage IGBTs VCES = 2500V IXGK75N250 IC110 = 75A IXGX75N250 For Capacitor Discharge VCE(sat) 2.7V Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX)... See More ⇒

 0.1. Size:174K  ixys
 ixgk75n250-ixgx75n250.pdf pdf_icon

IXGK75N250

Preliminary Technical Information High Voltage IGBTs VCES = 2500V IXGK75N250 IC110 = 75A IXGX75N250 For Capacitor Discharge VCE(sat) 2.7V Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX)... See More ⇒

 9.1. Size:229K  ixys
 ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

IXGK75N250

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 VCE(sat) 1.35V tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V (TAB) G VGES Continuous 20 V C E ... See More ⇒

 9.2. Size:221K  ixys
 ixgk72n60b3h1.pdf pdf_icon

IXGK75N250

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGK72N60B3H1 IC110 = 72A with Diode IXGX72N60B3H1 VCE(sat) 1.8V tfi(typ) = 92ns Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V (... See More ⇒

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Specs: IXGK50N60C2D1, IXGK50N90B2D1, IXGK55N120A3H1, IXGK60N60B2D1, IXGK60N60C2D1, IXGK64N60B3D1, IXGK72N60A3H1, IXGK72N60B3H1, GT30F124, IXGK82N120A3, IXGK82N120B3, IXGL200N60B3, IXGL75N250, IXGN100N170, IXGN120N60A3, IXGN120N60A3D1, IXGN200N60A2

Keywords - IXGK75N250 transistor spec

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