IXGN100N170 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGN100N170

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 735 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃

trⓘ - Tiempo de subida, typ: 192 nS

Coesⓘ - Capacitancia de salida, typ: 455 pF

Encapsulados: SOT227B

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IXGN100N170 datasheet

 ..1. Size:153K  ixys
 ixgn100n170.pdf pdf_icon

IXGN100N170

VCES = 1700V High Voltage IXGN100N170 IC90 = 95A IGBT VCE(sat) 3.0V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A IC90 TC = 90 C 95 A C ICM TC = 25 C, 1ms 600 A G = Gate

 9.1. Size:200K  ixys
 ixgn120n60a3.pdf pdf_icon

IXGN100N170

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =

 9.2. Size:200K  ixys
 ixgn120n60a3d1.pdf pdf_icon

IXGN100N170

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =

 9.3. Size:202K  ixys
 ixgn120n60a3-a3d1.pdf pdf_icon

IXGN100N170

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =

MOSTRAR MÁS

Otros transistores... IXGK64N60B3D1, IXGK72N60A3H1, IXGK72N60B3H1, IXGK75N250, IXGK82N120A3, IXGK82N120B3, IXGL200N60B3, IXGL75N250, GT30J124, IXGN120N60A3, IXGN120N60A3D1, IXGN200N60A2, IXGN200N60B3, IXGN320N60A3, IXGN400N30A3, IXGN400N60A3, IXGN400N60B3