IXGN100N170 IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGN100N170
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 735 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 192 nS
   Coesⓘ - Output Capacitance, typ: 455 pF
   Qgⓘ - Total Gate Charge, typ: 425 nC
   Package: SOT227B

IXGN100N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGN100N170 Datasheet (PDF)

..1. Size:153K ixys
ixgn100n170.pdf

VCES = 1700VHigh Voltage IXGN100N170IC90 = 95AIGBT VCE(sat) 3.0V ESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1700 VGVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 160 AIC90 TC = 90C 95 ACICM TC = 25C, 1ms 600 AG = Gate

9.1. Size:200K ixys
ixgn120n60a3.pdf

VCES = 600VIXGN120N60A3GenX3TM 600V IGBTIXGN120N60A3D1 IC110 = 120AVCE(sat) 1.35VUltra-low Vsat PT IGBTs for up to5kHz switchingSOT-227B, miniBLOC E153432E E 60A360A3D1 GSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VG = Gate, C = Collector, E =

9.2. Size:200K ixys
ixgn120n60a3d1.pdf