IXGN120N60A3D1 Todos los transistores

 

IXGN120N60A3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGN120N60A3D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 595 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 82 nS
   Coesⓘ - Capacitancia de salida, typ: 800 pF
   Paquete / Cubierta: SOT227B
 

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IXGN120N60A3D1 PDF specs

 ..1. Size:200K  ixys
 ixgn120n60a3d1.pdf pdf_icon

IXGN120N60A3D1

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =... See More ⇒

 2.1. Size:200K  ixys
 ixgn120n60a3.pdf pdf_icon

IXGN120N60A3D1

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =... See More ⇒

 2.2. Size:202K  ixys
 ixgn120n60a3-a3d1.pdf pdf_icon

IXGN120N60A3D1

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =... See More ⇒

 9.1. Size:153K  ixys
 ixgn100n170.pdf pdf_icon

IXGN120N60A3D1

VCES = 1700V High Voltage IXGN100N170 IC90 = 95A IGBT VCE(sat) 3.0V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A IC90 TC = 90 C 95 A C ICM TC = 25 C, 1ms 600 A G = Gate... See More ⇒

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Otros transistores... IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , GT50JR22 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 .

 

 
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