IXGN120N60A3D1 Todos los transistores

 

IXGN120N60A3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGN120N60A3D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 595 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 82 nS
   Coesⓘ - Capacitancia de salida, typ: 800 pF
   Paquete / Cubierta: SOT227B
 

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IXGN120N60A3D1 Datasheet (PDF)

 ..1. Size:200K  ixys
 ixgn120n60a3d1.pdf pdf_icon

IXGN120N60A3D1

VCES = 600VIXGN120N60A3GenX3TM 600V IGBTIXGN120N60A3D1 IC110 = 120AVCE(sat) 1.35VUltra-low Vsat PT IGBTs for up to5kHz switchingSOT-227B, miniBLOC E153432E E 60A360A3D1 GSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VG = Gate, C = Collector, E =

 2.1. Size:200K  ixys
 ixgn120n60a3.pdf pdf_icon

IXGN120N60A3D1

VCES = 600VIXGN120N60A3GenX3TM 600V IGBTIXGN120N60A3D1 IC110 = 120AVCE(sat) 1.35VUltra-low Vsat PT IGBTs for up to5kHz switchingSOT-227B, miniBLOC E153432E E 60A360A3D1 GSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VG = Gate, C = Collector, E =

 2.2. Size:202K  ixys
 ixgn120n60a3-a3d1.pdf pdf_icon

IXGN120N60A3D1

VCES = 600VIXGN120N60A3GenX3TM 600V IGBTIXGN120N60A3D1 IC110 = 120AVCE(sat) 1.35VUltra-low Vsat PT IGBTs for up to5kHz switchingSOT-227B, miniBLOC E153432E E 60A360A3D1 GSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VG = Gate, C = Collector, E =

 9.1. Size:153K  ixys
 ixgn100n170.pdf pdf_icon

IXGN120N60A3D1

VCES = 1700VHigh Voltage IXGN100N170IC90 = 95AIGBT VCE(sat) 3.0V ESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1700 VGVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 160 AIC90 TC = 90C 95 ACICM TC = 25C, 1ms 600 AG = Gate

MOSTRAR MÁS

Otros transistores... IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , FGD4536 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 .

History: SG50N06T | IRG4IBC10UDPBF | MMG450D120B6TN | BSM50GB120DLC | IXXK200N65B4 | APT40GT60BRG | IKFW50N60DH3E

 

 
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