IXGN120N60A3D1 Specs and Replacement

Type Designator: IXGN120N60A3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 595 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃

tr ⓘ - Rise Time, typ: 82 nS

Coesⓘ - Output Capacitance, typ: 800 pF

Package: SOT227B

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IXGN120N60A3D1 datasheet

 ..1. Size:200K  ixys
 ixgn120n60a3d1.pdf pdf_icon

IXGN120N60A3D1

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =... See More ⇒

 2.1. Size:200K  ixys
 ixgn120n60a3.pdf pdf_icon

IXGN120N60A3D1

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =... See More ⇒

 2.2. Size:202K  ixys
 ixgn120n60a3-a3d1.pdf pdf_icon

IXGN120N60A3D1

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V G = Gate, C = Collector, E =... See More ⇒

 9.1. Size:153K  ixys
 ixgn100n170.pdf pdf_icon

IXGN120N60A3D1

VCES = 1700V High Voltage IXGN100N170 IC90 = 95A IGBT VCE(sat) 3.0V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A IC90 TC = 90 C 95 A C ICM TC = 25 C, 1ms 600 A G = Gate... See More ⇒

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Specs: IXGK72N60B3H1, IXGK75N250, IXGK82N120A3, IXGK82N120B3, IXGL200N60B3, IXGL75N250, IXGN100N170, IXGN120N60A3, GT50JR22, IXGN200N60A2, IXGN200N60B3, IXGN320N60A3, IXGN400N30A3, IXGN400N60A3, IXGN400N60B3, IXGN50N120C3H1, IXGN60N60C2

Keywords - IXGN120N60A3D1 transistor spec

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