IXGN200N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGN200N60B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 830 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 83 nS
Coesⓘ - Capacitancia de salida, typ: 1260 pF
Qgⓘ - Carga total de la puerta, typ: 750 nC
Paquete / Cubierta: SOT227B
- Selección de transistores por parámetros
IXGN200N60B3 Datasheet (PDF)
ixgn200n60b3.pdf

VCES = 600VIXGN200N60B3GenX3TM 600V IGBTIC110 = 200AVCE(sat) 1.50VMedium-Speed Low-Vsat PTIGBT for 5-40kHz SwitchingSOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VE VGEM Transient 30 VCIC25 TC = 25C 300 AIC110 TC
ixgn200n60b.pdf

IXGN 200N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 200 AVCE(sat) = 2.1 VESymbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 200 ACIL Terminal Current Limit 100 AIC90 TC = 90C 120 AG = Gate, C = Collector, E = Emitter
ixgn200n60a2.pdf

IXGN 200N60A2 VCES = 600 VIGBTIC25 = 200 AOptimized for SwitchingVCE(sat) = 1.35 Vup to 5 kHzPreliminary Data SheetESymbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 200 ACIC110 TC = 110C 100 AICM TC = 25C,
ixgn200n60 ixgn200n60a.pdf

HiPerFASTTM IGBT VCES IC25 VCE(sat)IXGN 200N60 600 V 200 A 2.5 VIXGN 200N60A 600 V 200 A 2.7 VESymbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 200 ACIC90 TC = 90C 100 AICM TC = 25C, 1 ms 300 AG = Gate, C = Collec
Otros transistores... IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , FGPF4536 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 , IXGN60N60C2D1 , IXGN72N60A3 .
History: SGH10N60RUFD | IGW30N60H3 | HMG15N60 | NGTB20N120IHS
History: SGH10N60RUFD | IGW30N60H3 | HMG15N60 | NGTB20N120IHS



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48