IXGP15N120C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP15N120C
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.8(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 95 pF
Qgⓘ - Carga total de la puerta, typ: 86 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de IXGP15N120C - IGBT
IXGP15N120C Datasheet (PDF)
ixgp15n120c.pdf
VCES =1200 VIXGA 15N120CIGBTIC25 = 30 AIXGP 15N120CVCE(sat) = 3.8 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 A TO-263 AA (IXGA)
ixga15n120c ixgp15n120c.pdf
VCES =1200 VIXGA 15N120CIGBTIC25 = 30 AIXGP 15N120CVCE(sat) = 3.8 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 A TO-263 AA (IXGA)
ixgp15n120b.pdf
IXGA 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGP 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA
ixgp15n120b2.pdf
VCES =1200 VIXGA 15N120B2HiPerFASTTM IGBTIC25 = 30 AIXGP 15N120B2VCE(sat) = 3.5 VOptimized for 10-25 KHz hardtfi(typ) = 137 nsswitching and up to 150 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 2
ixga15n120b2 ixgp15n120b2.pdf
VCES =1200 VIXGA 15N120B2HiPerFASTTM IGBTIC25 = 30 AIXGP 15N120B2VCE(sat) = 3.5 VOptimized for 10-25 KHz hardtfi(typ) = 137 nsswitching and up to 150 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 2
ixga15n120b ixgp15n120b.pdf
IXGA 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGP 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA
Otros transistores... IXGN72N60C3H1 , IXGN82N120B3H1 , IXGN82N120C3H1 , IXGP12N120A2 , IXGP12N120A3 , IXGP12N60B , IXGP14N120B , IXGP15N120B2 , FGH60N60SFD , IXGP16N60B2 , IXGP16N60B2D1 , IXGP16N60C2 , IXGP16N60C2D1 , IXGP20N100A3 , IXGP20N120 , IXGP20N120A3 , IXGP20N120B3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2