IXGP15N120C IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGP15N120C
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 95 pF
   Qgⓘ - Total Gate Charge, typ: 86 nC
   Package: TO220

IXGP15N120C Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGP15N120C Datasheet (PDF)

..1. Size:574K ixys
ixgp15n120c.pdf

VCES =1200 VIXGA 15N120CIGBTIC25 = 30 AIXGP 15N120CVCE(sat) = 3.8 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 A TO-263 AA (IXGA)

..2. Size:576K ixys
ixga15n120c ixgp15n120c.pdf

4.1. Size:50K ixys
ixgp15n120b.pdf

IXGA 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGP 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA

4.2. Size:59K ixys
ixgp15n120b2.pdf

VCES =1200 VIXGA 15N120B2HiPerFASTTM IGBTIC25 = 30 AIXGP 15N120B2VCE(sat) = 3.5 VOptimized for 10-25 KHz hardtfi(typ) = 137 nsswitching and up to 150 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 2

4.3. Size:63K ixys
ixga15n120b2 ixgp15n120b2.pdf