IXGP16N60C2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP16N60C2D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 72 pF
Qgⓘ - Carga total de la puerta, typ: 25 nC
Paquete / Cubierta: TO220
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IXGP16N60C2D1 Datasheet (PDF)
ixgp16n60c2d1.pdf
HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC
ixgp16n60c2.pdf
HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2C2-Class IC110 = 16AIXGP16N60C2High Speed VCE(sat) 3.0Vtfi(typ) = 33nsTO-263 AA (IXGA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110
ixgp16n60b2.pdf
HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2B2-Class High Speed IC110 = 16AIXGP16N60B2VCE(sat) 2.3Vtfi(typ) = 70nsTO-263 AA (IXGA)Symbol Test Conditions Maximum Ratings GEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110
ixgp16n60b2d1.pdf
HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2D1B2-Class High Speed IC110 = 16AIXGP16N60B2D1w/ Diode VCE(sat) 2.3VIXGH16N60B2D1tfi(typ) = 70nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (
Otros transistores... IXGP12N120A3 , IXGP12N60B , IXGP14N120B , IXGP15N120B2 , IXGP15N120C , IXGP16N60B2 , IXGP16N60B2D1 , IXGP16N60C2 , MBQ50T65FDSC , IXGP20N100A3 , IXGP20N120 , IXGP20N120A3 , IXGP20N120B3 , IXGP24N120C3 , IXGP24N60C , IXGP24N60C4 , IXGP24N60C4D1 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2