IXGP20N120A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGP20N120A3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 180 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

trⓘ - Tiempo de subida, typ: 44 nS

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: TO220

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IXGP20N120A3 datasheet

 ..1. Size:236K  ixys
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf pdf_icon

IXGP20N120A3

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G

 ..2. Size:234K  ixys
ixgp20n120a3.pdf pdf_icon

IXGP20N120A3

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G

 4.1. Size:69K  ixys
ixgp20n120.pdf pdf_icon

IXGP20N120A3

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T

 4.2. Size:212K  ixys
ixga20n120b3 ixgp20n120b3.pdf pdf_icon

IXGP20N120A3

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 VCE(sat) 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Trans

Otros transistores... IXGP15N120B2, IXGP15N120C, IXGP16N60B2, IXGP16N60B2D1, IXGP16N60C2, IXGP16N60C2D1, IXGP20N100A3, IXGP20N120, IRG7R313U, IXGP20N120B3, IXGP24N120C3, IXGP24N60C, IXGP24N60C4, IXGP24N60C4D1, IXGP2N100, IXGP2N100A, IXGP30N120B3