IXGP36N60A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGP36N60A3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 220 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 36(110°C) A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4(max) V @25℃

trⓘ - Tiempo de subida, typ: 23 nS

Coesⓘ - Capacitancia de salida, typ: 115 pF

Encapsulados: TO220

 Búsqueda de reemplazo de IXGP36N60A3 IGBT

- Selecciónⓘ de transistores por parámetros

 

IXGP36N60A3 datasheet

 ..1. Size:220K  ixys
 ixgp36n60a3.pdf pdf_icon

IXGP36N60A3

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGE

 9.1. Size:85K  ixys
 ixgp30n60b4d1.pdf pdf_icon

IXGP36N60A3

Preliminary Technical Information VCES = 600V High-Gain IGBT IXGP30N60B4D1 IC110 = 30A w/ Diode VCE(sat) 1.7V tfi(typ) = 88ns High-Speed PT Trench IGBT TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector

 9.2. Size:269K  ixys
 ixgp30n60c3.pdf pdf_icon

IXGP36N60A3

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 9.3. Size:209K  ixys
 ixgp30n120b3.pdf pdf_icon

IXGP36N60A3

VCES = 1200V GenX3TM 1200V IXGA30N120B3 IC110 = 30A IGBTs IXGP30N120B3 VCE(sat) 3.5V IXGH30N120B3 tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Tra

MOSTRAR MÁS

Otros transistores... IXGP2N100A, IXGP30N120B3, IXGP30N60B2, IXGP30N60B4D1, IXGP30N60C2, IXGP30N60C3, IXGP30N60C3C1, IXGP30N60C3D4, YGW40N65F1, IXGP42N30C3, IXGP48N60A3, IXGP48N60B3, IXGP48N60C3, IXGP4N100, IXGP50N60B4, IXGP50N60C4, IXGP7N60BD1