Справочник IGBT. IXGP36N60A3

 

IXGP36N60A3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGP36N60A3
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 220
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 36(110°C)
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.4(max)
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 23
   Емкость коллектора типовая (Cc), pf: 115
   Общий заряд затвора (Qg), typ, nC: 80
   Тип корпуса: TO220

 Аналог (замена) для IXGP36N60A3

 

 

IXGP36N60A3 Datasheet (PDF)

 ..1. Size:220K  ixys
 ixgp36n60a3.pdf

IXGP36N60A3 IXGP36N60A3

Preliminary Technical InformationIXGA36N60A3 VCES = 600VGenX3TM 600V IGBTIXGP36N60A3IC110 = 36AIXGH36N60A3VCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsE (TAB)VCES TC = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGE

 9.1. Size:85K  ixys
 ixgp30n60b4d1.pdf

IXGP36N60A3 IXGP36N60A3

Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGP30N60B4D1IC110 = 30Aw/ Diode VCE(sat) 1.7V tfi(typ) = 88nsHigh-Speed PT Trench IGBTTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCTabEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G = Gate C = Collector

 9.2. Size:269K  ixys
 ixgp30n60c3.pdf

IXGP36N60A3 IXGP36N60A3

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 9.3. Size:209K  ixys
 ixgp30n120b3.pdf

IXGP36N60A3 IXGP36N60A3

VCES = 1200VGenX3TM 1200V IXGA30N120B3IC110 = 30AIGBTs IXGP30N120B3VCE(sat) 3.5VIXGH30N120B3tfi(typ) = 204nsHigh-Speed Low-Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Tra

 9.4. Size:546K  ixys
 ixgp30n60b2.pdf

IXGP36N60A3 IXGP36N60A3

Advance Technical DataVCES = 600 VIXGP 30N60B2HiPerFASTTM IGBTIC25 = 70 AVCE(sat)

 9.5. Size:287K  ixys
 ixgp30n60c3d4.pdf

IXGP36N60A3 IXGP36N60A3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25C to 150C 600 V C (Tab) VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 9.6. Size:551K  ixys
 ixgp30n60c2.pdf

IXGP36N60A3 IXGP36N60A3

VCES = 600 VIXGP 30N60C2HiPerFASTTM IGBTIC25 = 70 AC2- Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-220 (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 V GCEIC25 TC = 25C (limited by leads) 70 AIC110 TC = 110C30 AG = Gate, C =

 9.7. Size:278K  ixys
 ixgp30n60c3c1.pdf

IXGP36N60A3 IXGP36N60A3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

Другие IGBT... IXGP2N100A , IXGP30N120B3 , IXGP30N60B2 , IXGP30N60B4D1 , IXGP30N60C2 , IXGP30N60C3 , IXGP30N60C3C1 , IXGP30N60C3D4 , TGPF30N40P , IXGP42N30C3 , IXGP48N60A3 , IXGP48N60B3 , IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 .

 

 
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