IXGP7N60BD1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGP7N60BD1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 80 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 10 nS

Coesⓘ - Capacitancia de salida, typ: 50 pF

Encapsulados: TO220

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IXGP7N60BD1 datasheet

 ..1. Size:77K  ixys
ixgp7n60bd1.pdf pdf_icon

IXGP7N60BD1

Advanced Technical Information IXGA 7N60BD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60BD1 IC25 = 14 A with Diode VCE(sat) = 2.0 V tfi = 150ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C 14 A TO-263 AA (IXGA) IC90 TC = 90 C 7

 5.1. Size:70K  ixys
ixga7n60b ixgp7n60b.pdf pdf_icon

IXGP7N60BD1

VCES = 600 V HiPerFASTTM IGBT IXGA 7N60B IC25 = 14 A IXGP 7N60B VCE(sat) = 2 V tfi = 150 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C 14 A IC90 TC = 90 C 7 A ICM TC = 25 C, 1 ms 30 A G C (TAB) E SSOA

 5.2. Size:68K  ixys
ixgp7n60b.pdf pdf_icon

IXGP7N60BD1

VCES = 600 V HiPerFASTTM IGBT IXGA 7N60B IC25 = 14 A IXGP 7N60B VCE(sat) = 2 V tfi = 150 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C 14 A IC90 TC = 90 C 7 A ICM TC = 25 C, 1 ms 30 A G C (TAB) E SSOA

 6.1. Size:89K  ixys
ixgp7n60cd1.pdf pdf_icon

IXGP7N60BD1

IXGA 7N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60CD1 IC25 = 14 A with Diode VCE(sat)typ = 2.0 V LightspeedTM Series tfi = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C 14 A TO-263 AA (IXGA) IC90 TC

Otros transistores... IXGP36N60A3, IXGP42N30C3, IXGP48N60A3, IXGP48N60B3, IXGP48N60C3, IXGP4N100, IXGP50N60B4, IXGP50N60C4, RJH60F7BDPQ-A0, IXGP7N60CD1, IXGQ20N120B, SL75T120FZ, IXGQ50N60B4D1, IXGQ50N60C4D1, IXGR120N60B, IXGR120N60C2, IXGR12N60C