IXGP7N60BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP7N60BD1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 80
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 14
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 10
Capacitancia de salida (Cc), typ, pF: 50
Carga total de la puerta (Qg), typ, nC: 25
Paquete / Cubierta: TO220
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IXGP7N60BD1 Datasheet (PDF)
ixgp7n60bd1.pdf
Advanced Technical InformationIXGA 7N60BD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60BD1 IC25 = 14 Awith DiodeVCE(sat) = 2.0 Vtfi = 150nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC = 90C 7
ixga7n60b ixgp7n60b.pdf
VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA
ixgp7n60b.pdf
VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA
ixgp7n60cd1.pdf
IXGA 7N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60CD1 IC25 = 14 Awith DiodeVCE(sat)typ = 2.0 VLightspeedTM Seriestfi = 45 nsPreliminary DataSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC
ixga7n60c ixgp7n60c.pdf
VCES = 600 VIXGA 7N60CHiPerFASTTM IGBTIC25 = 14 AIXGP 7N60CLightspeedTM SeriesVCE(sat) = 2.7 Vtfi = 45 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30
ixgp7n60c.pdf
VCES = 600 VIXGA 7N60CHiPerFASTTM IGBTIC25 = 14 AIXGP 7N60CLightspeedTM SeriesVCE(sat) = 2.7 Vtfi = 45 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30
Otros transistores... IXGP36N60A3 , IXGP42N30C3 , IXGP48N60A3 , IXGP48N60B3 , IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IRG4PF50WD , IXGP7N60CD1 , IXGQ20N120B , SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ