All IGBT. IXGP7N60BD1 Datasheet

 

IXGP7N60BD1 Datasheet and Replacement


   Type Designator: IXGP7N60BD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 80 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qgⓘ - Total Gate Charge, typ: 25 nC
   Package: TO220
      - IGBT Cross-Reference

 

IXGP7N60BD1 Datasheet (PDF)

 ..1. Size:77K  ixys
 ixgp7n60bd1.pdf pdf_icon

IXGP7N60BD1

Advanced Technical InformationIXGA 7N60BD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60BD1 IC25 = 14 Awith DiodeVCE(sat) = 2.0 Vtfi = 150nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC = 90C 7

 5.1. Size:70K  ixys
 ixga7n60b ixgp7n60b.pdf pdf_icon

IXGP7N60BD1

VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA

 5.2. Size:68K  ixys
 ixgp7n60b.pdf pdf_icon

IXGP7N60BD1

VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA

 6.1. Size:89K  ixys
 ixgp7n60cd1.pdf pdf_icon

IXGP7N60BD1

IXGA 7N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60CD1 IC25 = 14 Awith DiodeVCE(sat)typ = 2.0 VLightspeedTM Seriestfi = 45 nsPreliminary DataSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC

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Datasheet: IXGP36N60A3 , IXGP42N30C3 , IXGP48N60A3 , IXGP48N60B3 , IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , SGP30N60 , IXGP7N60CD1 , IXGQ20N120B , SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C .

History: IXGH50N60B

Keywords - IXGP7N60BD1 transistor datasheet

 IXGP7N60BD1 cross reference
 IXGP7N60BD1 equivalent finder
 IXGP7N60BD1 lookup
 IXGP7N60BD1 substitution
 IXGP7N60BD1 replacement

 

 
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