IXGQ20N120B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGQ20N120B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 190 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Paquete / Cubierta: TO3P
- Selección de transistores por parámetros
IXGQ20N120B Datasheet (PDF)
ixgq20n120b.pdf
High Voltage IGBT with DiodeVCES = 1200 VIXGQ 20N120BIC25 = 40 AIXGQ 20N120BD1VCE(sat) = 3.4 Vtfi(typ) = 160 nsBD1TO-3P (IXGQ)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C40 AC(TAB)EIC110 TC = 110C20 AICM TC = 25C, 1 ms 100
ixgq240n30pb.pdf
PolarTM High Speed VCES = 300VIXGQ240N30PBIGBT ICP = 500A VCE(sat) 1.6V For PDP ApplicationsTO-3PSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVGES Continuous 20 VCVGEM Transient 30 VETabIC25 TC = 25C (Chip Capability) 240 AICP TJ 150C, tp
ixgq24n30pb.pdf
PolarTM High Speed VCES = 300VIXGQ240N30PBIGBT ICP = 500A VCE(sat) 1.6V For PDP ApplicationsTO-3PSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVGES Continuous 20 VCVGEM Transient 30 VETabIC25 TC = 25C (Chip Capability) 240 AICP TJ 150C, tp
Otros transistores... IXGP48N60A3 , IXGP48N60B3 , IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , TGD30N40P , SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 .
History: AMPBQ200N75GSFA | MPBW50N65EH | MPBW30N65E | MSG75C65HHC0 | MPGC50N65E | HGT1S2N120CNS | IXGH24N50BU1
History: AMPBQ200N75GSFA | MPBW50N65EH | MPBW30N65E | MSG75C65HHC0 | MPGC50N65E | HGT1S2N120CNS | IXGH24N50BU1
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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