IXGQ20N120B Specs and Replacement

Type Designator: IXGQ20N120B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 190 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO3P

 IXGQ20N120B Substitution

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IXGQ20N120B datasheet

 ..1. Size:508K  ixys
 ixgq20n120b.pdf pdf_icon

IXGQ20N120B

High Voltage IGBT with Diode VCES = 1200 V IXGQ 20N120B IC25 = 40 A IXGQ 20N120BD1 VCE(sat) = 3.4 V tfi(typ) = 160 ns BD1 TO-3P (IXGQ) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C40 A C (TAB) E IC110 TC = 110 C20 A ICM TC = 25 C, 1 ms 100... See More ⇒

 9.1. Size:150K  ixys
 ixgq240n30pb.pdf pdf_icon

IXGQ20N120B

PolarTM High Speed VCES = 300V IXGQ240N30PB IGBT ICP = 500A VCE(sat) 1.6V For PDP Applications TO-3P Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VGES Continuous 20 V C VGEM Transient 30 V E Tab IC25 TC = 25 C (Chip Capability) 240 A ICP TJ 150 C, tp ... See More ⇒

 9.2. Size:152K  ixys
 ixgq24n30pb.pdf pdf_icon

IXGQ20N120B

PolarTM High Speed VCES = 300V IXGQ240N30PB IGBT ICP = 500A VCE(sat) 1.6V For PDP Applications TO-3P Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VGES Continuous 20 V C VGEM Transient 30 V E Tab IC25 TC = 25 C (Chip Capability) 240 A ICP TJ 150 C, tp ... See More ⇒

Specs: IXGP48N60A3, IXGP48N60B3, IXGP48N60C3, IXGP4N100, IXGP50N60B4, IXGP50N60C4, IXGP7N60BD1, IXGP7N60CD1, IKW30N60H3, SL75T120FZ, IXGQ50N60B4D1, IXGQ50N60C4D1, IXGR120N60B, IXGR120N60C2, IXGR12N60C, IXGR16N170AH1, IXGR24N120C3D1

Keywords - IXGQ20N120B transistor spec

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