IXGR120N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR120N60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 520 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 156 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 45 nS
Coesⓘ - Capacitancia de salida, typ: 680 pF
Qgⓘ - Carga total de la puerta, typ: 350 nC
Paquete / Cubierta: ISOPLUS247
Búsqueda de reemplazo de IXGR120N60B - IGBT
IXGR120N60B Datasheet (PDF)
ixgr120n60b.pdf
HiPerFASTTM IGBTIXGR 120N60B VCES = 600 VIC25 = 156 AISOPLUS247TM(Electrically Isolated Back Surface) VCE(sat) = 2.1 VSymbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25C 156 AIC110 TC = 110C 102 AIL(R
ixgr120n60c2.pdf
Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGR120N60C2IC110 = 60AISOPLUS247TMVCE(sat) 2.7VLightspeed 2TM Seriestfi(typ) = 80ns(Electrically Isolated Back Surface)ISOPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VG (ISOLATED TAB)
ixgr12n60c.pdf
IXGR 12N60C VCES = 600 VHiPerFASTTM IGBT IC25 = 15 AISOPLUS247TM VCE(sat)= 2.7 V(Electrically Isolated Back Surface)tfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 V GCE Isolated Backside*IC25 TC = 25C15 AIC90 TC = 90C
ixgr16n170ah1.pdf
Advance Technical DataIXGR 16N170AH1VCES = 1700 VHigh VoltageIC25 = 16 AIGBT with DiodeVCE(sat) = 5.0 VElectrically Isolated Tabtfi(typ) = 40 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)VCES TJ = 25C to 150C 1700 VE153432VCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VVGEM Transient 30 VGCISOLATED TABIC25 TC = 25C16
Otros transistores... IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , MGD623S , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2