All IGBT. IXGR120N60B Datasheet

 

IXGR120N60B IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGR120N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 520 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 156 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 680 pF
   Qgⓘ - Total Gate Charge, typ: 350 nC
   Package: ISOPLUS247

 IXGR120N60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGR120N60B Datasheet (PDF)

 ..1. Size:558K  ixys
 ixgr120n60b.pdf

IXGR120N60B IXGR120N60B

HiPerFASTTM IGBTIXGR 120N60B VCES = 600 VIC25 = 156 AISOPLUS247TM(Electrically Isolated Back Surface) VCE(sat) = 2.1 VSymbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25C 156 AIC110 TC = 110C 102 AIL(R

 4.1. Size:169K  ixys
 ixgr120n60c2.pdf

IXGR120N60B IXGR120N60B

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGR120N60C2IC110 = 60AISOPLUS247TMVCE(sat) 2.7VLightspeed 2TM Seriestfi(typ) = 80ns(Electrically Isolated Back Surface)ISOPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VG (ISOLATED TAB)

 8.1. Size:54K  ixys
 ixgr12n60c.pdf

IXGR120N60B IXGR120N60B

IXGR 12N60C VCES = 600 VHiPerFASTTM IGBT IC25 = 15 AISOPLUS247TM VCE(sat)= 2.7 V(Electrically Isolated Back Surface)tfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 V GCE Isolated Backside*IC25 TC = 25C15 AIC90 TC = 90C

 9.1. Size:520K  ixys
 ixgr16n170ah1.pdf

IXGR120N60B IXGR120N60B

Advance Technical DataIXGR 16N170AH1VCES = 1700 VHigh VoltageIC25 = 16 AIGBT with DiodeVCE(sat) = 5.0 VElectrically Isolated Tabtfi(typ) = 40 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)VCES TJ = 25C to 150C 1700 VE153432VCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VVGEM Transient 30 VGCISOLATED TABIC25 TC = 25C16

Datasheet: IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , MGD623S , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 .

 

 
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