IXGR12N60C IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGR12N60C

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 55 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 64 pF

Encapsulados: ISOPLUS247

 Búsqueda de reemplazo de IXGR12N60C IGBT

- Selecciónⓘ de transistores por parámetros

 

IXGR12N60C datasheet

 ..1. Size:54K  ixys
 ixgr12n60c.pdf pdf_icon

IXGR12N60C

IXGR 12N60C VCES = 600 V HiPerFASTTM IGBT IC25 = 15 A ISOPLUS247TM VCE(sat)= 2.7 V (Electrically Isolated Back Surface) tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25 TC = 25 C15 A IC90 TC = 90 C

 8.1. Size:558K  ixys
 ixgr120n60b.pdf pdf_icon

IXGR12N60C

HiPerFASTTM IGBT IXGR 120N60B VCES = 600 V IC25 = 156 A ISOPLUS247TM (Electrically Isolated Back Surface) VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25 TC = 25 C 156 A IC110 TC = 110 C 102 A IL(R

 8.2. Size:169K  ixys
 ixgr120n60c2.pdf pdf_icon

IXGR12N60C

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGR120N60C2 IC110 = 60A ISOPLUS247TM VCE(sat) 2.7V Lightspeed 2TM Series tfi(typ) = 80ns (Electrically Isolated Back Surface) ISOPLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G (ISOLATED TAB)

 9.1. Size:520K  ixys
 ixgr16n170ah1.pdf pdf_icon

IXGR12N60C

Advance Technical Data IXGR 16N170AH1 VCES = 1700 V High Voltage IC25 = 16 A IGBT with Diode VCE(sat) = 5.0 V Electrically Isolated Tab tfi(typ) = 40 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) VCES TJ = 25 C to 150 C 1700 V E153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G C ISOLATED TAB IC25 TC = 25 C16

MOSTRAR MÁS

Otros transistores... IXGP7N60BD1, IXGP7N60CD1, IXGQ20N120B, SL75T120FZ, IXGQ50N60B4D1, IXGQ50N60C4D1, IXGR120N60B, IXGR120N60C2, IKW40T120, IXGR16N170AH1, IXGR24N120C3D1, IXGR24N60C, IXGR32N170AH1, IXGR32N170H1, IXGR32N90B2D1, IXGR35N120B, IXGR35N120BD1