IXGR12N60C Specs and Replacement

Type Designator: IXGR12N60C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 55 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 64 pF

Package: ISOPLUS247

 IXGR12N60C Substitution

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IXGR12N60C datasheet

 ..1. Size:54K  ixys
 ixgr12n60c.pdf pdf_icon

IXGR12N60C

IXGR 12N60C VCES = 600 V HiPerFASTTM IGBT IC25 = 15 A ISOPLUS247TM VCE(sat)= 2.7 V (Electrically Isolated Back Surface) tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25 TC = 25 C15 A IC90 TC = 90 C... See More ⇒

 8.1. Size:558K  ixys
 ixgr120n60b.pdf pdf_icon

IXGR12N60C

HiPerFASTTM IGBT IXGR 120N60B VCES = 600 V IC25 = 156 A ISOPLUS247TM (Electrically Isolated Back Surface) VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25 TC = 25 C 156 A IC110 TC = 110 C 102 A IL(R... See More ⇒

 8.2. Size:169K  ixys
 ixgr120n60c2.pdf pdf_icon

IXGR12N60C

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGR120N60C2 IC110 = 60A ISOPLUS247TM VCE(sat) 2.7V Lightspeed 2TM Series tfi(typ) = 80ns (Electrically Isolated Back Surface) ISOPLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G (ISOLATED TAB) ... See More ⇒

 9.1. Size:520K  ixys
 ixgr16n170ah1.pdf pdf_icon

IXGR12N60C

Advance Technical Data IXGR 16N170AH1 VCES = 1700 V High Voltage IC25 = 16 A IGBT with Diode VCE(sat) = 5.0 V Electrically Isolated Tab tfi(typ) = 40 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) VCES TJ = 25 C to 150 C 1700 V E153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G C ISOLATED TAB IC25 TC = 25 C16 ... See More ⇒

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Specs: IXGP7N60BD1, IXGP7N60CD1, IXGQ20N120B, SL75T120FZ, IXGQ50N60B4D1, IXGQ50N60C4D1, IXGR120N60B, IXGR120N60C2, IKW40T120, IXGR16N170AH1, IXGR24N120C3D1, IXGR24N60C, IXGR32N170AH1, IXGR32N170H1, IXGR32N90B2D1, IXGR35N120B, IXGR35N120BD1

Keywords - IXGR12N60C transistor spec

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