IXGR32N170AH1 Todos los transistores

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IXGR32N170AH1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGR32N170AH1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1700V

Voltaje de saturación colector-emisor (Vce sat): 5.2V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 26A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 50

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: ISOPLUS247

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IXGR32N170AH1 Datasheet (PDF)

1.1. ixgr32n170h1.pdf Size:82K _igbt_a

IXGR32N170AH1
IXGR32N170AH1

IXGR 32N170H1 VCES = 1700 V High Voltage IC25 = 38 A IGBT with Diode VCE(sat) = 3.5 V Electrically Isolated Tab tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V G VGEM Transient ±30 V C ISOLATED TAB E IC25 TC = 25°C3

1.2. ixgr32n170ah1.pdf Size:519K _igbt_a

IXGR32N170AH1
IXGR32N170AH1

Advance Technical Information IXGR 32N170AH1 VCES = 1700 V High Voltage IC25 = 26 A IGBT with Diode VCE(sat) = 5.2 V Electrically Isolated Tab tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V G VGEM Transient ±30 V C ISOLATED TAB E IC25 TC

3.1. ixgr32n90b2d1.pdf Size:199K _ixys

IXGR32N170AH1
IXGR32N170AH1

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M? 900 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25OC47 A ISOLATED TAB E

3.2. ixgr32n60cd1.pdf Size:571K _ixys

IXGR32N170AH1
IXGR32N170AH1

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25C45 A E Is

3.3. ixgr32n90b2d1.pdf Size:195K _igbt_a

IXGR32N170AH1
IXGR32N170AH1

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25OC47 A ISOLATED T

3.4. ixgr32n60cd1.pdf Size:569K _igbt_a

IXGR32N170AH1
IXGR32N170AH1

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°

3.5. ixgr32n60c.pdf Size:536K _igbt_a

IXGR32N170AH1
IXGR32N170AH1

IXGR 32N60C VCE = 600 V HiPerFASTTM IGBT IC25 = 45 A Lightspeed Series VCE(sat) = 2.7 V ISOPLUS247TM package tfi typ = 55 ns (Electrically Isolated Back Side) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C Isolated Backside* VGEM Transie

Otros transistores... IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IRGB20B60PD1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B .

 


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Introduzca al menos 1 números o letras