IXGR32N170AH1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGR32N170AH1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 200 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 26 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.2 V @25℃

trⓘ - Tiempo de subida, typ: 57 nS

Coesⓘ - Capacitancia de salida, typ: 215 pF

Encapsulados: ISOPLUS247

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IXGR32N170AH1 datasheet

 ..1. Size:519K  ixys
 ixgr32n170ah1.pdf pdf_icon

IXGR32N170AH1

Advance Technical Information IXGR 32N170AH1 VCES = 1700 V High Voltage IC25 = 26 A IGBT with Diode VCE(sat) = 5.2 V Electrically Isolated Tab tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC

 4.1. Size:82K  ixys
 ixgr32n170h1.pdf pdf_icon

IXGR32N170AH1

IXGR 32N170H1 VCES = 1700 V High Voltage IC25 = 38 A IGBT with Diode VCE(sat) = 3.5 V Electrically Isolated Tab tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC = 25 C3

 7.1. Size:569K  ixys
 ixgr32n60cd1.pdf pdf_icon

IXGR32N170AH1

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25

 7.2. Size:195K  ixys
 ixgr32n90b2d1.pdf pdf_icon

IXGR32N170AH1

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M 900 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25OC47 A ISOLATED T

MOSTRAR MÁS

Otros transistores... IXGQ50N60B4D1, IXGQ50N60C4D1, IXGR120N60B, IXGR120N60C2, IXGR12N60C, IXGR16N170AH1, IXGR24N120C3D1, IXGR24N60C, IRG4PC50UD, IXGR32N170H1, IXGR32N90B2D1, IXGR35N120B, IXGR35N120BD1, IXGR35N120C, IXGR39N60B, IXGR39N60BD1, IXGR40N60B