All IGBT. IXGR32N170AH1 Datasheet

 

IXGR32N170AH1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGR32N170AH1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 26 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 57 nS
   Coesⓘ - Output Capacitance, typ: 215 pF
   Qgⓘ - Total Gate Charge, typ: 155 nC
   Package: ISOPLUS247

 IXGR32N170AH1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGR32N170AH1 Datasheet (PDF)

 ..1. Size:519K  ixys
 ixgr32n170ah1.pdf

IXGR32N170AH1 IXGR32N170AH1

Advance Technical InformationIXGR 32N170AH1VCES = 1700 VHigh VoltageIC25 = 26 AIGBT with DiodeVCE(sat) = 5.2 VElectrically Isolated Tabtfi(typ) = 50 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC

 4.1. Size:82K  ixys
 ixgr32n170h1.pdf

IXGR32N170AH1 IXGR32N170AH1

IXGR 32N170H1VCES = 1700 VHigh VoltageIC25 = 38 AIGBT with DiodeVCE(sat) = 3.5 VElectrically Isolated Tabtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25C3

 7.1. Size:569K  ixys
 ixgr32n60cd1.pdf

IXGR32N170AH1 IXGR32N170AH1

VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25

 7.2. Size:195K  ixys
 ixgr32n90b2d1.pdf

IXGR32N170AH1 IXGR32N170AH1

Advance Technical InformationVCES = 900 VIXGR 32N90B2D1HiPerFASTTM IGBTIC25 = 47 Awith Fast DiodeVCE(sat) = 2.9 Vtfi typ = 150 nsElectrically Isolated BaseSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25OC to 150OC 900 VVCGR TJ = 25OC to 150OC; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25OC47 A ISOLATED T

 7.3. Size:538K  ixys
 ixgr32n60c.pdf

IXGR32N170AH1 IXGR32N170AH1

IXGR 32N60C VCE = 600 VHiPerFASTTM IGBTIC25 = 45 ALightspeed SeriesVCE(sat) = 2.7 VISOPLUS247TM packagetfi typ = 55 ns(Electrically Isolated Back Side)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCIsolated Backside*VGEM Transie

Datasheet: IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , XNF15N60T , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B .

 

 
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