IXGR35N120C Todos los transistores

 

IXGR35N120C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGR35N120C
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 260 pF
   Paquete / Cubierta: ISOPLUS247
     - Selección de transistores por parámetros

 

IXGR35N120C Datasheet (PDF)

 ..1. Size:49K  ixys
 ixgr35n120b ixgr35n120c.pdf pdf_icon

IXGR35N120C

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

 ..2. Size:47K  ixys
 ixgr35n120c.pdf pdf_icon

IXGR35N120C

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

 4.1. Size:47K  ixys
 ixgr35n120b.pdf pdf_icon

IXGR35N120C

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

 4.2. Size:517K  ixys
 ixgr35n120bd1.pdf pdf_icon

IXGR35N120C

Advanced Technical InformationIXGR 35N120BD1High Voltage IGBTVCES = 1200 Vwith DiodeIC25 = 54 A(Electrically Isolated Back Surface)VCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 V(TAB)VGEM Transient 30 V GCEIC25 TC = 25

MOSTRAR MÁS

Otros transistores... IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IRGB20B60PD1 , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 .

History: NCE15TD120BD | MMG100J060U | MMG200D170B | FD600R17KF6C_B2 | IXGH32N90B2D1 | APTGF150A120T | SMC7G15US60

 

 
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