IXGR35N120C - аналоги, основные параметры, даташиты
Наименование: IXGR35N120C
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 200 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 70 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 4(max) V @25℃
tr ⓘ - Время нарастания типовое: 27 nS
Coesⓘ - Выходная емкость,
типовая: 260 pF
Тип корпуса: ISOPLUS247
Аналог (замена) для IXGR35N120C
- подбор ⓘ IGBT транзистора по параметрам
IXGR35N120C даташит
..1. Size:49K ixys
ixgr35n120b ixgr35n120c.pdf 
VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G VGEM Transient 30 V C E Isolated Backside* IC25
..2. Size:47K ixys
ixgr35n120c.pdf 
VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G VGEM Transient 30 V C E Isolated Backside* IC25
4.1. Size:47K ixys
ixgr35n120b.pdf 
VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G VGEM Transient 30 V C E Isolated Backside* IC25
9.1. Size:569K ixys
ixgr32n60cd1.pdf 
VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25
9.2. Size:82K ixys
ixgr32n170h1.pdf 
IXGR 32N170H1 VCES = 1700 V High Voltage IC25 = 38 A IGBT with Diode VCE(sat) = 3.5 V Electrically Isolated Tab tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC = 25 C3
9.3. Size:195K ixys
ixgr32n90b2d1.pdf 
Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M 900 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25OC47 A ISOLATED T
9.4. Size:511K ixys
ixgr39n60b.pdf 
VCES = 600 V IXGR 39N60B HiPerFASTTM IGBT IC25 = 66 A IXGR 39N60BD1 ISOPLUS247TM VCE(sat) = 1.8 V (Electrically Isolated Backside) tfi(typ) = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Back
9.5. Size:519K ixys
ixgr32n170ah1.pdf 
Advance Technical Information IXGR 32N170AH1 VCES = 1700 V High Voltage IC25 = 26 A IGBT with Diode VCE(sat) = 5.2 V Electrically Isolated Tab tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC
9.6. Size:538K ixys
ixgr32n60c.pdf 
IXGR 32N60C VCE = 600 V HiPerFASTTM IGBT IC25 = 45 A Lightspeed Series VCE(sat) = 2.7 V ISOPLUS247TM package tfi typ = 55 ns (Electrically Isolated Back Side) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C Isolated Backside* VGEM Transie
9.7. Size:511K ixys
ixgr39n60bd1.pdf 
VCES = 600 V IXGR 39N60B HiPerFASTTM IGBT IC25 = 66 A IXGR 39N60BD1 ISOPLUS247TM VCE(sat) = 1.8 V (Electrically Isolated Backside) tfi(typ) = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Back
Другие IGBT... IXGR16N170AH1, IXGR24N120C3D1, IXGR24N60C, IXGR32N170AH1, IXGR32N170H1, IXGR32N90B2D1, IXGR35N120B, IXGR35N120BD1, GT30G122, IXGR39N60B, IXGR39N60BD1, IXGR40N60B, IXGR40N60B2, IXGR40N60B2D1, IXGR40N60C, IXGR40N60C2, IXGR40N60C2D1
