IXGR39N60BD1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGR39N60BD1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 140 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 66 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8(max) V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 250 pF

Encapsulados: ISOPLUS247

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IXGR39N60BD1 datasheet

 ..1. Size:511K  ixys
 ixgr39n60bd1.pdf pdf_icon

IXGR39N60BD1

VCES = 600 V IXGR 39N60B HiPerFASTTM IGBT IC25 = 66 A IXGR 39N60BD1 ISOPLUS247TM VCE(sat) = 1.8 V (Electrically Isolated Backside) tfi(typ) = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Back

 4.1. Size:511K  ixys
 ixgr39n60b.pdf pdf_icon

IXGR39N60BD1

VCES = 600 V IXGR 39N60B HiPerFASTTM IGBT IC25 = 66 A IXGR 39N60BD1 ISOPLUS247TM VCE(sat) = 1.8 V (Electrically Isolated Backside) tfi(typ) = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Back

 9.1. Size:49K  ixys
 ixgr35n120b ixgr35n120c.pdf pdf_icon

IXGR39N60BD1

VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G VGEM Transient 30 V C E Isolated Backside* IC25

 9.2. Size:569K  ixys
 ixgr32n60cd1.pdf pdf_icon

IXGR39N60BD1

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25

MOSTRAR MÁS

Otros transistores... IXGR24N60C, IXGR32N170AH1, IXGR32N170H1, IXGR32N90B2D1, IXGR35N120B, IXGR35N120BD1, IXGR35N120C, IXGR39N60B, MBQ40T65FDSC, IXGR40N60B, IXGR40N60B2, IXGR40N60B2D1, IXGR40N60C, IXGR40N60C2, IXGR40N60C2D1, IXGR40N60CD1, IXGR48N60B3