Справочник IGBT. IXGR39N60BD1

 

IXGR39N60BD1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGR39N60BD1
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 66 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8(max) V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 250 pF
   Тип корпуса: ISOPLUS247

 Аналог (замена) для IXGR39N60BD1

 

 

IXGR39N60BD1 Datasheet (PDF)

 ..1. Size:511K  ixys
 ixgr39n60bd1.pdf

IXGR39N60BD1 IXGR39N60BD1

VCES = 600 VIXGR 39N60BHiPerFASTTM IGBTIC25 = 66 AIXGR 39N60BD1ISOPLUS247TMVCE(sat) = 1.8 V(Electrically Isolated Backside)tfi(typ) = 200 nsPreliminary data sheet(D1)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back

 4.1. Size:511K  ixys
 ixgr39n60b.pdf

IXGR39N60BD1 IXGR39N60BD1

VCES = 600 VIXGR 39N60BHiPerFASTTM IGBTIC25 = 66 AIXGR 39N60BD1ISOPLUS247TMVCE(sat) = 1.8 V(Electrically Isolated Backside)tfi(typ) = 200 nsPreliminary data sheet(D1)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back

 9.1. Size:49K  ixys
 ixgr35n120b ixgr35n120c.pdf

IXGR39N60BD1 IXGR39N60BD1

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

 9.2. Size:569K  ixys
 ixgr32n60cd1.pdf

IXGR39N60BD1 IXGR39N60BD1

VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25

 9.3. Size:82K  ixys
 ixgr32n170h1.pdf

IXGR39N60BD1 IXGR39N60BD1

IXGR 32N170H1VCES = 1700 VHigh VoltageIC25 = 38 AIGBT with DiodeVCE(sat) = 3.5 VElectrically Isolated Tabtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25C3

 9.4. Size:47K  ixys
 ixgr35n120c.pdf

IXGR39N60BD1 IXGR39N60BD1

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

 9.5. Size:195K  ixys
 ixgr32n90b2d1.pdf

IXGR39N60BD1 IXGR39N60BD1

Advance Technical InformationVCES = 900 VIXGR 32N90B2D1HiPerFASTTM IGBTIC25 = 47 Awith Fast DiodeVCE(sat) = 2.9 Vtfi typ = 150 nsElectrically Isolated BaseSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25OC to 150OC 900 VVCGR TJ = 25OC to 150OC; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25OC47 A ISOLATED T

 9.6. Size:47K  ixys
 ixgr35n120b.pdf

IXGR39N60BD1 IXGR39N60BD1

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

 9.7. Size:519K  ixys
 ixgr32n170ah1.pdf

IXGR39N60BD1 IXGR39N60BD1

Advance Technical InformationIXGR 32N170AH1VCES = 1700 VHigh VoltageIC25 = 26 AIGBT with DiodeVCE(sat) = 5.2 VElectrically Isolated Tabtfi(typ) = 50 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC

 9.8. Size:517K  ixys
 ixgr35n120bd1.pdf

IXGR39N60BD1 IXGR39N60BD1

Advanced Technical InformationIXGR 35N120BD1High Voltage IGBTVCES = 1200 Vwith DiodeIC25 = 54 A(Electrically Isolated Back Surface)VCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 V(TAB)VGEM Transient 30 V GCEIC25 TC = 25

 9.9. Size:538K  ixys
 ixgr32n60c.pdf

IXGR39N60BD1 IXGR39N60BD1

IXGR 32N60C VCE = 600 VHiPerFASTTM IGBTIC25 = 45 ALightspeed SeriesVCE(sat) = 2.7 VISOPLUS247TM packagetfi typ = 55 ns(Electrically Isolated Back Side)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCIsolated Backside*VGEM Transie

Другие IGBT... IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IXGR39N60B , IRG4PC50UD , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 , IXGR48N60B3 .

 

 
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