IXGR55N120A3H1 Todos los transistores

 

IXGR55N120A3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGR55N120A3H1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.35(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 42 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: ISOPLUS247
     - Selección de transistores por parámetros

 

IXGR55N120A3H1 Datasheet (PDF)

 ..1. Size:94K  ixys
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IXGR55N120A3H1

Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGR55N120A3H1IC110 = 30AIGBT w/ Diode VCE(sat) 2.35V (Electrically Isolated Tab)Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VC Isolated TabEVGES Continuous

 9.1. Size:514K  ixys
ixgr50n60b2.pdf pdf_icon

IXGR55N120A3H1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 9.2. Size:506K  ixys
ixgr50n60c2.pdf pdf_icon

IXGR55N120A3H1

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

 9.3. Size:215K  ixys
ixgr50n90b2d1.pdf pdf_icon

IXGR55N120A3H1

IXGR 50N90B2D1VCES = 900 VHiPerFASTTMIC25 = 40 AIXGR 50N90B2D1IGBT with FastVCE(sat) = 2.9 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast Diode(Electrically Isolated Back Surface)Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient

Otros transistores... IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 , FGW75N60HD , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , IXGR64N60A3 .

History: FGA40N60UFD | IXBT20N360HV | RGT8BM65D | OST50N65HF-D | MMIX1X200N60B3 | RGT8NS65D

 

 
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