Справочник IGBT. IXGR55N120A3H1

 

IXGR55N120A3H1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGR55N120A3H1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 70 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.35(max) V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 42 nS
   Coesⓘ - Выходная емкость, типовая: 300 pF
   Qgⓘ - Общий заряд затвора, typ: 185 nC
   Тип корпуса: ISOPLUS247

 Аналог (замена) для IXGR55N120A3H1

 

 

IXGR55N120A3H1 Datasheet (PDF)

 ..1. Size:94K  ixys
 ixgr55n120a3h1.pdf

IXGR55N120A3H1 IXGR55N120A3H1

Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGR55N120A3H1IC110 = 30AIGBT w/ Diode VCE(sat) 2.35V (Electrically Isolated Tab)Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VC Isolated TabEVGES Continuous

 9.1. Size:514K  ixys
 ixgr50n60b2.pdf

IXGR55N120A3H1 IXGR55N120A3H1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 9.2. Size:506K  ixys
 ixgr50n60c2.pdf

IXGR55N120A3H1 IXGR55N120A3H1

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

 9.3. Size:215K  ixys
 ixgr50n90b2d1.pdf

IXGR55N120A3H1 IXGR55N120A3H1

IXGR 50N90B2D1VCES = 900 VHiPerFASTTMIC25 = 40 AIXGR 50N90B2D1IGBT with FastVCE(sat) = 2.9 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast Diode(Electrically Isolated Back Surface)Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient

 9.4. Size:563K  ixys
 ixgr50n60bd1.pdf

IXGR55N120A3H1 IXGR55N120A3H1

VCES = 600 VIXGR 50N60BHiPerFASTTM IGBTIC25 = 75 AIXGR 50N60BD1ISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25

 9.5. Size:514K  ixys
 ixgr50n60b2d1.pdf

IXGR55N120A3H1 IXGR55N120A3H1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 9.6. Size:92K  ixys
 ixgr50n160h1.pdf

IXGR55N120A3H1 IXGR55N120A3H1

Advance Technical InformationHigh Voltage IGBT VCES = 1600VIXGR50N160H1with DiodeIC110 = 36AVCE(sat) 2.30V( Electrically Isolated Tab)ISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C, RGE = 1M 1600 VGVGES Continuous 20 VCEIsolated TabVGEM Transient 30 VIC25 TC = 25C, Lead

 9.7. Size:563K  ixys
 ixgr50n60b.pdf

IXGR55N120A3H1 IXGR55N120A3H1

VCES = 600 VIXGR 50N60BHiPerFASTTM IGBTIC25 = 75 AIXGR 50N60BD1ISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25

 9.8. Size:506K  ixys
 ixgr50n60c2d1.pdf

IXGR55N120A3H1 IXGR55N120A3H1

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

 9.9. Size:140K  ixys
 ixgr50n60a2u1.pdf

IXGR55N120A3H1 IXGR55N120A3H1

Advance Technical InformationIXGR 50N60A2U1 VCES = 600 VIGBT with DiodeIC25 = 75 ALow Saturation Voltage IGBT withVCE(sat) = 1.7 VLow Forward Drop DiodeElectrically Isolated Mounting TabPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247(IXGR)E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

Другие IGBT... IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 , FGW75N60HD , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , IXGR64N60A3 .

 

 
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