IXGR55N120A3H1 - аналоги и описание IGBT

 ..1. Size:94K  ixys
 ixgr55n120a3h1.pdf 

Advance Technical Information GenX3TM 1200V VCES = 1200V IXGR55N120A3H1 IC110 = 30A IGBT w/ Diode VCE(sat) 2.35V (Electrically Isolated Tab) Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C Isolated Tab E VGES Continuous

 9.1. Size:514K  ixys
 ixgr50n60b2.pdf 

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C

 9.2. Size:506K  ixys
 ixgr50n60c2.pdf 

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25 C75 A

 9.3. Size:215K  ixys
 ixgr50n90b2d1.pdf 

IXGR 50N90B2D1 VCES = 900 V HiPerFASTTM IC25 = 40 A IXGR 50N90B2D1 IGBT with Fast VCE(sat) = 2.9 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V VGES Continuous 20 V VGEM Transient

 9.4. Size:563K  ixys
 ixgr50n60bd1.pdf 

 9.5. Size:514K  ixys
 ixgr50n60b2d1.pdf 

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C

 9.6. Size:92K  ixys
 ixgr50n160h1.pdf 

Advance Technical Information High Voltage IGBT VCES = 1600V IXGR50N160H1 with Diode IC110 = 36A VCE(sat) 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C, RGE = 1M 1600 V G VGES Continuous 20 V C E Isolated Tab VGEM Transient 30 V IC25 TC = 25 C, Lead

 9.7. Size:563K  ixys
 ixgr50n60b.pdf 

 9.8. Size:506K  ixys
 ixgr50n60c2d1.pdf 

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25 C75 A

 9.9. Size:140K  ixys
 ixgr50n60a2u1.pdf 

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V