IXGR60N60B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR60N60B2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 340 pF
Qgⓘ - Carga total de la puerta, typ: 170 nC
Paquete / Cubierta: ISOPLUS247
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IXGR60N60B2 Datasheet (PDF)
ixgr60n60b2.pdf
Advance Technical DataIXGR 60N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 100 ns(Electrically Isolated Back Surface)D1Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC(ISOLAT
ixgr60n60b2d1.pdf
Advance Technical DataIXGR 60N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 100 ns(Electrically Isolated Back Surface)D1Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC(ISOLAT
ixgr60n60u1.pdf
VCES = 600 VLow VCE(sat) IGBT IXGR 60N60U1IC25 = 75 Awith DiodeVCE(sat) = 1.7 VISOPLUS247TM(Electrically Isolated Back Surface)Preliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C 75 A EIsolated back surface*IC100
ixgr60n60c2.pdf
IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti
ixgr60n60c3d1.pdf
TMVCES = 600VGenX3 600V IGBTIXGR60N60C3D1IC110 = 30Aw/ DiodeVCE(sat) 2.5V(Electrically Isolated Back Surface)tfi(typ) = 50nsHigh Speed PT IGBT for40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC
ixgr60n60c2c1.pdf
HiperFASTTM IGBT VCES = 600VIXGR60N60C2C1w/ SiC Anti-Parallel IC110 = 39ADiode VCE(sat) 2.7Vtfi(typ) = 54ns(Electrically Isolated Back Surface)ISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25
ixgr60n60c2d1.pdf
IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti
ixgr60n60c3c1.pdf
GenX3TM 600V IGBT VCES = 600VIXGR60N60C3C1w/ SiC Anti-Parallel IC110 = 30ADiode VCE(sat) 2.5Vtfi(typ) = 50ns(Electrically Isolated Back Surface)High Speed PT IGBT for 40-100kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC Isolated T
Otros transistores... IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 , IXGR55N120A3H1 , IRG4PC40UD , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , IXGR64N60A3 , IXGR6N170A .
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