IXGR64N60A3 Todos los transistores

 ..1. Size:183K  ixys
 ixgr64n60a3.pdf

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGR64N60A3 IC110 = 47A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching ISOPLUS247TM (IXGR) Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 11

 9.1. Size:169K  ixys
 ixgr6n170a.pdf

Advance Technical Information High Voltage IGBT VCES = 1700V IXGR6N170A IC25 = 5.5A VCE(sat) 7.0V tfi(typ) = 32ns (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 5.5 A C Isolated Ta

 9.2. Size:109K  ixys
 ixgr60n60u1.pdf

VCES = 600 V Low VCE(sat) IGBT IXGR 60N60U1 IC25 = 75 A with Diode VCE(sat) = 1.7 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C 75 A E Isolated back surface* IC100

 9.3. Size:505K  ixys
 ixgr60n60c2.pdf

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (ISOLATED TAB) VGES Conti

 9.4. Size:511K  ixys
 ixgr60n60b2d1.pdf

Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (ISOLAT

 9.5. Size:214K  ixys
 ixgr60n60c3d1.pdf

TM VCES = 600V GenX3 600V IGBT IXGR60N60C3D1 IC110 = 30A w/ Diode VCE(sat) 2.5V (Electrically Isolated Back Surface) tfi(typ) = 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C

 9.6. Size:180K  ixys
 ixgr60n60c2c1.pdf

 9.7. Size:505K  ixys
 ixgr60n60c2d1.pdf

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (ISOLATED TAB) VGES Conti

 9.8. Size:192K  ixys
 ixgr60n60c3c1.pdf

GenX3TM 600V IGBT VCES = 600V IXGR60N60C3C1 w/ SiC Anti-Parallel IC110 = 30A Diode VCE(sat) 2.5V tfi(typ) = 50ns (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Isolated T

 9.9. Size:511K  ixys
 ixgr60n60b2.pdf

Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (ISOLAT